Quantum anomalous Hall effect in topological insulator memory

Journal Article · Thu May 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4916999· OSTI ID:22410038

Jalil, Mansoor B. A., ^[1]; Tan, S. G. ^[2]; Siu, Z. B. ^[2]

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1. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, Singapore 117576 (Singapore)
2. Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608 (Singapore)

We theoretically investigate the quantum anomalous Hall effect (QAHE) in a magnetically coupled three-dimensional-topological insulator (3D-TI) system. We apply the generalized spin-orbit coupling Hamiltonian to obtain the Hall conductivity σ{sup xy} of the system. The underlying topology of the QAHE phenomenon is then analyzed to show the quantization of σ{sup xy} and its relation to the Berry phase of the system. Finally, we analyze the feasibility of utilizing σ{sup xy} as a memory read-out in a 3D-TI based memory at finite temperatures, with comparison to known magnetically doped 3D-TIs.

• OSTI ID: 22410038
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COMPARATIVE EVALUATIONS
DOPED MATERIALS
HALL EFFECT
HAMILTONIANS
L-S COUPLING
QUANTIZATION
READOUT SYSTEMS
THREE-DIMENSIONAL CALCULATIONS
THREE-DIMENSIONAL LATTICES
TOPOLOGY