Effect of Ru thickness on spin pumping in Ru/Py bilayer

Journal Article · Thu May 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4913510· OSTI ID:22409920

Behera, Nilamani; Singh, M. Sanjoy; Chaudhary, Sujeet; Muduli, P. K. ^[1]

---

1. Department of Physics, Thin Film Laboratory, Indian Institute of Technology Delhi, New Delhi 110016 (India)

We report the effect of Ru thickness (t{sub Ru}) on ferromagnetic resonance (FMR) line-width of Ru(t{sub Ru})/Py(23 nm) bilayer samples grown on Si(100)/SiO{sub 2} substrates at room temperature by magnetron sputtering. The FMR line-width is found to vary linearly with frequency for all thicknesses of Ru, indicating intrinsic origin of damping. For Ru thicknesses below 15 nm, Gilbert-damping parameter, α is almost constant. We ascribe this behavior to spin back flow that is operative for Ru thicknesses lower than the spin diffusion length in Ru, λ{sub sd}. For thicknesses >15 nm (>λ{sub sd}), the damping constant increases with Ru thickness, indicating spin pumping from Py into Ru.

• OSTI ID: 22409920
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIFFUSION LENGTH
FERROMAGNETIC RESONANCE
INTERFACES
LAYERS
LINE WIDTHS
RUTHENIUM
SILICA
SILICON
SILICON OXIDES
SPIN
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THICKNESS
THIN FILMS