Growth of tapered silica nanowires with a shallow U-shaped vapor chamber: Growth mechanism and structural and optical properties
- Department of Physics, Sichuan University, Chengdu 610064 (China)
Traditional chemical vapor deposition method modified with a shallow U-shaped vapor chamber has been used to synthesize tapered bamboo shoot-like (BS-like) amorphous SiO{sub 2} nanowires (NWs) on Si (100) substrates without catalyst. The key innovation of this approach lies in a creation of swirling flow of the reactant vapors during the growth, which leads to a harvest of tapered silica NWs with lengths up to several microns. The unique structures and corresponding luminescence properties of the BS-like NWs were studied and their relationship with the evaporated active reactants was explored. A thermodynamic model that considers the critical role of the vapor flow during the growth is proposed to understand the structural and optical features. The shallow U-shaped vapor chamber-aided approach may provide a viable way to tailor novel structure of NWs for potential applications in nano-devices.
- OSTI ID:
- 22402930
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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