Long phase coherence length and anisotropic magnetoresistance in MgZnO thin film
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083 (China)
- Department of Physics, Xiamen University, Xiamen 361005 (China)
We comprehensively investigate magnetotransport properties of MgZnO thin film grown on ZnO substrate by molecular-beam epitaxy. We measure the weak localization effect and extract the electron phase coherence length by fitting to a three-dimensional weak localization theory and by analyzing the different changing rate of the magnetoresistance, results of which are in good agreement with each other. The phase coherence length ranges from 38.4±1 nm at 50 K to 99.8±3.6 nm at 1.4 K, almost the same as that of ZnO nanoplates and In-doped ZnO nanowires, and its temperature dependence is found to scale as T{sup −3/4}. Meanwhile, we study the anisotropic magnetoresistance resulting from the geometric effect as well as the Lorentz force induced path-length effect, which will be enhanced in higher magnetic fields.
- OSTI ID:
- 22402890
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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