Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared
- Aix-Marseille University, CNRS, LP3 UMR 7341, F-13288 Marseille (France)
- Industrial and Manufacturing Systems Engineering, Kansas State University, Manhattan, Kansas 66506 (United States)
We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-μm glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of ≈4 × 10{sup 11 }W cm{sup −2} which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams.
- OSTI ID:
- 22402861
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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