Electroresistance and field effect studies on manganite based heterostructure

Journal Article · Tue Apr 14 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4917563· OSTI ID:22402852

Solanki, P. S.; Khachar, Uma; Vagadia, Megha; Ravalia, Ashish; Katba, Savan

Electronic properties of manganites are significantly important for various spintronic applications such as microelectronics, magnetic data storage, communication technologies, and memory devices. Influence of applied electric field on the room temperature charge transport in ZnO/La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrNb{sub 0.002}Ti{sub 0.998}O{sub 3} (SNTO) heterostructure has been investigated using field effect studies. Large negative and positive electroresistance has been observed in heterostructure under various possible circuit geometries. Field effect studies have been carried out using three different circuit geometries, namely: (i) ZnO as a control electrode (E{sub LZ}), (ii) SNTO as a control electrode (E{sub LS}), and (iii) shorted ZnO and SNTO as control electrodes (E{sub LZS}). For this, channel electric field (E{sub CH}) dependent variation in channel resistance (R{sub C}) (of manganite channel) and I-V (across manganite channel) under various control fields (E{sub C}) have been studied. Variation in barrier height (Φ{sub B}) with control field (E{sub C}) for different geometries has been discussed.

• OSTI ID: 22402852
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHARGE TRANSPORT
DIFFUSION BARRIERS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRODES
HETEROJUNCTIONS
LANTHANUM COMPOUNDS
MANGANATES
MEMORY DEVICES
MICROELECTRONICS
NIOBATES
STRONTIUM TITANATES
TEMPERATURE RANGE 0273-0400 K
VARIATIONS
ZINC OXIDES