Formation kinetics of copper-related light-induced degradation in crystalline silicon
Journal Article
·
· Journal of Applied Physics
- Department of Micro and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo (Finland)
Light-induced degradation (LID) is a deleterious effect in crystalline silicon, which is considered to originate from recombination-active boron-oxygen complexes and/or copper-related defects. Although LID in both cases appears as a fast initial decay followed by a second slower degradation, we show that the time constant of copper-related degradation increases with increasing boron concentration in contrast to boron-oxygen LID. Temperature-dependent analysis reveals that the defect formation is limited by copper diffusion. Finally, interface defect density measurements confirm that copper-related LID is dominated by recombination in the wafer bulk.
- OSTI ID:
- 22402827
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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