Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

Journal Article · Sun Dec 07 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4903552· OSTI ID:22402738

Shinde, Sachin M.; Tanemura, Masaki ^[1]; Kalita, Golap ^[1]

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1. Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material as well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.

• OSTI ID: 22402738
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DIELECTRIC MATERIALS
ELECTRODES
ELECTRONIC EQUIPMENT
FABRICATION
GRAPHENE
LAYERS
MEMORY DEVICES
METHACRYLIC ACID ESTERS
MOLYBDENUM OXIDES
MOLYBDENUM SULFIDES
PMMA
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY