Ultrafast terahertz Faraday rotation in graphene
- Macalester College, Saint Paul, Minnesota 55105 (United States)
- Naval Research Laboratory, Washington, DC 20375 (United States)
Terahertz (THz) Faraday rotation measurements were performed to investigate carrier dynamics in p-type Chemical vapor deposition (CVD) graphene. We used static and time-resolved polarization-sensitive THz transmission measurements in a magnetic field to probe free carriers in GaAs, InP, and Graphene. Static measurements probe the equilibrium carrier density and momentum scattering rate. Time-resolved (optical pump/THz probe) measurements probe the change in these quantities following photoexcitation. In a typical CVD graphene sample, we found that 0.5 ps following photoexcitation with 1 × 10{sup 13} photons/cm{sup 2} pulses at 800 nm the effective hole scattering time decreased from 37 fs to 34.5 fs, while the carrier concentration increased from 2.0 × 10{sup 12} cm{sup −2} to 2.04 × 10{sup 12} cm{sup −2}, leading to a transient decrease in the conductivity of the film.
- OSTI ID:
- 22402735
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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