Reduced electrical impedance of SiO{sub 2}, deposited through focused ion beam based systems, due to impurity percolation
- Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
- Qualcomm Technologies, Qualcomm Inc., San Diego, California 92121 (United States)
The electrical impedance (both the resistive and capacitive aspects) of focused ion beam (FIB) deposited SiO{sub 2} has been correlated to the specific composition of the ion beam, in Ga- and Xe-based FIB systems. The presence of electrically percolating Ga in concert with carbon (inevitably found as the product of the hydrocarbon precursor decomposition) has been isolated as a major cause for the observed decrease in the resistivity of the deposited SiO{sub 2}. Concomitant with the decreased resistivity, an increased capacitance and effective dielectric constant was observed. Our study would be useful to understand the constraints to the deposition of high quality insulator films through FIB based methodologies.
- OSTI ID:
- 22402699
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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