Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well
- Instituto de Física “Gleb Wataghin,” Unicamp, 13083-859 Campinas, SP (Brazil)
- Physico-Technical Research Institute, Lobachevsky State University of Nizhni Novgorod, 603950 Nizhni Novgorod (Russian Federation)
We investigated the effects of nearby Mn ions on the confined states of a InGaAs/GaAs quantum well through circularly polarized and magneto-optical measurements. The addition of a Mn delta-doping layer at the barrier close to the well gives rise to surprisingly narrow absorption peaks in the photoluminescence excitation spectra. The peaks become increasingly stronger for decreasing spacer-layer thicknesses between the quantum well and the Mn layer. Most of the peaks were identified based on self-consistent calculations; however, we observed additional peaks that cannot be identified with quantum well transitions, which origin we attribute to an enhanced exciton-phonon coupling. Finally, we discuss possible effects related to the exciton magneto-polaron complex in the reinforcement of the photoluminescence excitation peaks.
- OSTI ID:
- 22402687
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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