Electronic structure and morphology of epitaxial Bi{sub 2}Te{sub 2}Se topological insulator films
- Experimentelle Physik VII, Universität Würzburg, Am Hubland, 97074 Würzburg (Germany)
- Experimentelle Physik III, Universität Würzburg, Am Hubland, 97074 Würzburg (Germany)
Epitaxial films of the ternary topological insulator Bi{sub 2}Te{sub 2}Se were grown on Si(111) substrates and investigated for their surface electronic properties and morphology. We employ a Se-capping procedure allowing for the preparation of clean films in the surface-analysis experimental setups. Using angle-resolved photoelectron spectroscopy, we determine the dispersion of the topological surface state. With time after surface preparation, the spectroscopic features in the surface electronic structure exhibit significant temperature-dependent shifts to higher binding energies. Scanning tunneling microscopy images show terraces with typical step edge separations of 50 nm–150 nm. X-ray photoelectron spectroscopy indicates an increased Se concentration at the surface.
- OSTI ID:
- 22402667
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural properties of Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} topological insulators grown by molecular beam epitaxy on GaAs(001) substrates
Molecular beam epitaxy of bilayer Bi(111) films on topological insulator Bi{sub 2}Te{sub 3}: A scanning tunneling microscopy study