Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains
- Department of Physics, Taras Shevchenko National University of Kyiv, 64 Volodymyrs'ka St., Kyiv 01601 (Ukraine)
- Institute for Nanoscience and Engineering, University of Arkansas, 731 W. Dickson St., Fayetteville, Arkansas 72701 (United States)
The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80 K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83 eV to 1.0 eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.
- OSTI ID:
- 22402666
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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