Magneto-transport properties of a random distribution of few-layer graphene patches

Journal Article · Fri Nov 21 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4901953· OSTI ID:22402664

Iacovella, Fabrice; Mitioglu, Anatolie; Pierre, Mathieu; Raquet, Bertrand; Goiran, Michel; Plochocka, Paulina; Escoffier, Walter ^[1]; Trinsoutrot, Pierre; Vergnes, Hugues; Caussat, Brigitte ^[2]; Conédéra, Véronique ^[3]

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1. Laboratoire National des Champs Magnétiques Intenses, University of Toulouse, UPS, INSA, CNRS-UPR 3228, 143 av. de Rangueil, F-31400 Toulouse (France)
2. Laboratoire de Génie Chimique, ENSIACET/INP de Toulouse, UMR CNRS 5503, 4 allée Emile Monso, 31432 Toulouse (France)
3. CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse (France)

In this study, we address the electronic properties of conducting films constituted of an array of randomly distributed few layer graphene patches and investigate on their most salient galvanometric features in the moderate and extreme disordered limit. We demonstrate that, in annealed devices, the ambipolar behaviour and the onset of Landau level quantization in high magnetic field constitute robust hallmarks of few-layer graphene films. In the strong disorder limit, however, the magneto-transport properties are best described by a variable-range hopping behaviour. A large negative magneto-conductance is observed at the charge neutrality point, in consistency with localized transport regime.

• OSTI ID: 22402664
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
EQUIPMENT
FILMS
GRAPHENE
LAYERS
MAGNETIC FIELDS
QUANTIZATION
RANDOMNESS