O-band quantum-confined Stark effect optical modulator from Ge/Si{sub 0.15}Ge{sub 0.85} quantum wells by well thickness tuning
- Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS UMR 8622, Bât. 220, 91405 Orsay Cedex (France)
- L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo di Como, Via Anzani 42, I-22100 Como (Italy)
We report an O-band optical modulator from a Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum well (MQW). Strong O-band optical modulation in devices commonly operating within E-band wavelength range can be achieved by simply decreasing the quantum well thickness. Both spectral photocurrent and optical transmission studies are performed to evaluate material characteristics and device performance from a surface-illuminated diode and a waveguide modulator, respectively. These results demonstrate the potential of using Ge/Si{sub 0.15}Ge{sub 0.85} MQWs for the realization of future on-chip wavelength-division multiplexing systems with optical modulators operating at different wavelengths over a wide spectral range.
- OSTI ID:
- 22402647
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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