Memristive operation mode of a site-controlled quantum dot floating gate transistor

Journal Article · Mon May 18 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4921061· OSTI ID:22402475

Hartmann, F.; Mauder, T.; Emmerling, M.; Schneider, C.; Kamp, M.; Worschech, L. ^[1]; Höfling, S. ^[1]

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1. Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)

We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling.

• OSTI ID: 22402475
• Journal Information: Applied Physics Letters, Vol. 106, Issue 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
HYSTERESIS
INDIUM ARSENIDES
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TRANSISTORS