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Title: ZnO:H indium-free transparent conductive electrodes for active-matrix display applications

Abstract

Transparent conductive electrodes based on hydrogen (H)-doped zinc oxide (ZnO) have been proposed for active-matrix (AM) display applications. When fabricated with optimal H plasma power and optimal plasma treatment time, the resulting ZnO:H films exhibit low sheet resistance of 200 Ω/◻ and high average transmission of 85% at a film thickness of 150 nm. The demonstrated transparent conductive ZnO:H films can potentially replace indium-tin-oxide and serve as pixel electrodes for organic light-emitting diodes as well as source/drain electrodes for ZnO-based thin-film transistors. Use of the proposed ZnO:H electrodes means that two photomask stages can be removed from the fabrication process flow for ZnO-based AM backplanes.

Authors:
;  [1]
  1. Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China)
Publication Date:
OSTI Identifier:
22402431
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRODES; HYDROGEN; INDIUM; LIGHT EMITTING DIODES; THIN FILMS; TIN OXIDES; ZINC OXIDES

Citation Formats

Chen, Shuming, and Wang, Sisi. ZnO:H indium-free transparent conductive electrodes for active-matrix display applications. United States: N. p., 2014. Web. doi:10.1063/1.4903499.
Chen, Shuming, & Wang, Sisi. ZnO:H indium-free transparent conductive electrodes for active-matrix display applications. United States. https://doi.org/10.1063/1.4903499
Chen, Shuming, and Wang, Sisi. 2014. "ZnO:H indium-free transparent conductive electrodes for active-matrix display applications". United States. https://doi.org/10.1063/1.4903499.
@article{osti_22402431,
title = {ZnO:H indium-free transparent conductive electrodes for active-matrix display applications},
author = {Chen, Shuming and Wang, Sisi},
abstractNote = {Transparent conductive electrodes based on hydrogen (H)-doped zinc oxide (ZnO) have been proposed for active-matrix (AM) display applications. When fabricated with optimal H plasma power and optimal plasma treatment time, the resulting ZnO:H films exhibit low sheet resistance of 200 Ω/◻ and high average transmission of 85% at a film thickness of 150 nm. The demonstrated transparent conductive ZnO:H films can potentially replace indium-tin-oxide and serve as pixel electrodes for organic light-emitting diodes as well as source/drain electrodes for ZnO-based thin-film transistors. Use of the proposed ZnO:H electrodes means that two photomask stages can be removed from the fabrication process flow for ZnO-based AM backplanes.},
doi = {10.1063/1.4903499},
url = {https://www.osti.gov/biblio/22402431}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 105,
place = {United States},
year = {Mon Dec 01 00:00:00 EST 2014},
month = {Mon Dec 01 00:00:00 EST 2014}
}