Hanle-effect measurements of spin injection from Mn{sub 5}Ge{sub 3}C{sub 0.8}/Al{sub 2}O{sub 3}-contacts into degenerately doped Ge channels on Si

Journal Article · Mon Dec 01 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903233· OSTI ID:22402412

Rolseth, Erlend; Reiter, Sebastian; Schulze, Jörg ^[1]; Chang, Li-Te; Tang, Jianshi; Wang, Kang L. ^[2]; Sürgers, Christoph ^[3]; Stefanov, Stefan; Chiussi, Stefano ^[4]

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1. Institut für Halbleitertechnik (IHT), Universität Stuttgart, Pfaffenwaldring 47, Stuttgart 70569 (Germany)
2. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States)
3. Physikalisches Institut, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1, Karlsruhe 76131 (Germany)
4. Dpto. Física Aplicada, E. I. Industrial, Universidad de Vigo, Vigo (Spain)

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn{sub 5}Ge{sub 3}C{sub 0.8}/Al{sub 2}O{sub 3}/n{sup +}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4 K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.

• OSTI ID: 22402412
• Journal Information: Applied Physics Letters, Vol. 105, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM OXIDES
CARBON COMPOUNDS
DIFFUSION LENGTH
DOPED MATERIALS
GERMANIUM
GERMANIUM COMPOUNDS
MANGANESE COMPOUNDS
SEMICONDUCTOR MATERIALS
SILICON
SPIN
TUNNEL EFFECT