Role of interfacial layer on complementary resistive switching in the TiN/HfO{sub x}/TiN resistive memory device

Journal Article · Mon Dec 01 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903341· OSTI ID:22402405

Zhang, H. Z. ^[1]; Gu, C. J.; Yew, K. S. ^[1]; Wang, X. P.; Lo, G. Q. ^[2]

---

1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
2. Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore)

The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfO{sub x}/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfO{sub x}/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfO{sub x} layer. In the TiN/HfO{sub x}/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfO{sub x} layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfO{sub x}/IL/TiN device.

• OSTI ID: 22402405
• Journal Information: Applied Physics Letters, Vol. 105, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
HAFNIUM OXIDES
LAYERS
MEMORY DEVICES
OXIDATION
OXYGEN IONS
PLATINUM
TITANIUM NITRIDES