Effect of boron localized states on the conduction band transport in B{sub x}Ga{sub 1−x}P
- I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Gießen (Germany)
- Department of Physics and Material Sciences Center, Phillips-Universität Marburg, Marburg (Germany)
We study the magnetotransport properties of an n-type (B,Ga)P:Te alloy and an n-type GaP:Te reference under hydrostatic pressure up to 17 kilobars in the temperature range from 1.5 to 300 K. The free carrier concentration and the mobility of the reference sample are almost independent of the applied hydrostatic pressure at room temperature. In contrast, the free carrier concentration as well as the mobility in the B{sub 0.012}Ga{sub 0.988}P:Te alloy increase by about 30% over the accessible pressure range. The observations are explained by assuming that a boron-related density of localized states exists in the vicinity of the conduction band edge of the alloy. These boron states act as electron traps as well as efficient scatter centers. Applying hydrostatic pressure shifts the energetic positions of conduction band edge at the X-point (where the electron transport takes place) and of the boron states apart reducing the impact of boron on the electronic transport properties of the alloy.
- OSTI ID:
- 22402404
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ni{sub x}Cd{sub 1−x}O: Semiconducting alloys with extreme type III band offsets
Tuning the band structure, magnetic and transport properties of the zigzag graphene nanoribbons/hexagonal boron nitride heterostructures by transverse electric field