Controlled bipolar doping in Cu{sub 3}N (100) thin films

Journal Article · Mon Dec 01 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903069· OSTI ID:22402401

Matsuzaki, Kosuke; Okazaki, Tetsushi; Lee, Yih-Shu; Susaki, Tomofumi ^[1]; Hosono, Hideo ^[1]

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1. Secure Materials Center, Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

We have fabricated insulating, p- and n-type Cu{sub 3}N(100) films on SrTiO{sub 3}(100) by plasma assisted molecular beam epitaxy. By controlling the Cu/N flux rate, p-type doping with 10{sup 18}–10{sup 20 }cm{sup −3} in Cu-poor condition and n-type doping with 10{sup 19}–10{sup 20 }cm{sup −3} in N-poor condition were obtained without introducing foreign species. Together with formation of insulating Cu{sub 3}N films with an optical absorption coefficient of ∼10{sup 5 }cm{sup −1} in the photon energy above ∼2.2 eV and an estimated indirect bandgap of ∼1.3 eV, the bipolar doping in Cu{sub 3}N films would be promising for solar energy conversion applications.

• OSTI ID: 22402401
• Journal Information: Applied Physics Letters, Vol. 105, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
COPPER NITRIDES
DOPED MATERIALS
MOLECULAR BEAM EPITAXY
PHOTONS
SOLAR ENERGY CONVERSION
STRONTIUM TITANATES
THIN FILMS