skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thermoelectric properties of DC-sputtered filled skutterudite thin film

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4916238· OSTI ID:22399355
 [1];  [1];  [2];  [3];  [4]
  1. Department of Mechanical Engineering, Stony Brook University, Stony Brook, New York 11794 (United States)
  2. Department of Mechanical Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)
  3. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  4. State Key Laboratory of Automotive Safety and Energy, Tsinghua University, Beijing 10084 (China)

The Yb filled CoSb{sub 3} skutterudite thermoelectric thin films were prepared by DC magnetron sputtering. The electrical conductivity, Seebeck coefficient, thermal conductivity, and figure of merit ZT of the samples are characterized in a temperature range of 300 K to 700 K. X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy are obtained to assess the phase composition and crystallinity of thin film samples at different heat treatment temperatures. Carrier concentrations and Hall mobilities are obtained from Hall Effect measurements, which provide further insight into the electrical conductivity and Seebeck coefficient mechanisms. The thermal conductivity of thin film filled skutterudite was found to be much less compared with bulk Yb filled CoSb{sub 3} skutterudite. In this work, the 1020 K heat treatment was adopted for thin film post process due to the high degree of crystallinity as well as avoiding reverse heating effect. Thin film samples of different thicknesses were prepared with the same sputtering deposition rate and maximum ZT of 0.48 was achieved at 700 K for the 130 nm thick sample. This value was between half and one third of the bulk figure of merit which was due to the lower Hall mobility.

OSTI ID:
22399355
Journal Information:
Journal of Applied Physics, Vol. 117, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English