Electrical and photovoltaic characteristics of MoS{sub 2}/Si p-n junctions

Journal Article · Sat Mar 21 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4915951· OSTI ID:22399316

Hao, Lanzhong; Liu, Yunjie; Gao, Wei; Han, Zhide; Xue, Qingzhong ^[1]; Zeng, Huizhong; Wu, Zhipeng; Zhu, Jun; Zhang, Wanli ^[2]

---

1. College of Science, China University of Petroleum, Qingdao, Shandong 266580 (China)
2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

Bulk-like molybdenum disulfide (MoS{sub 2}) thin films were deposited on the surface of p-type Si substrates using dc magnetron sputtering technique and MoS{sub 2}/Si p-n junctions were formed. The vibrating modes of E{sup 1}{sub 2g} and A{sub 1g} were observed from the Raman spectrum of the MoS{sub 2} films. The current density versus voltage (J-V) characteristics of the junction were investigated. A typical J-V rectifying effect with a turn-on voltage of 0.2 V was shown. In different voltage range, the electrical transporting of the junction was dominated by diffusion current and recombination current, respectively. Under the light illumination of 15 mW cm{sup −2}, the p-n junction exhibited obvious photovoltaic characteristics with a short-circuit current density of 3.2 mA cm{sup −2} and open-circuit voltage of 0.14 V. The fill factor and energy conversion efficiency were 42.4% and 1.3%, respectively. According to the determination of the Fermi-energy level (∼4.65 eV) and energy-band gap (∼1.45 eV) of the MoS{sub 2} films by capacitance-voltage curve and ultraviolet-visible transmission spectra, the mechanisms of the electrical and photovoltaic characteristics were discussed in terms of the energy-band structure of the MoS{sub 2}/Si p-n junctions. The results hold the promise for the integration of MoS{sub 2} thin films with commercially available Si-based electronics in high-efficient photovoltaic devices.

• OSTI ID: 22399316
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CAPACITANCE
CURRENT DENSITY
DIFFUSION
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ENERGY CONVERSION
ENERGY LEVELS
EV RANGE
FILL FACTORS
ILLUMINANCE
MOLYBDENUM SULFIDES
PHOTOVOLTAIC EFFECT
P-N JUNCTIONS
RAMAN SPECTRA
RECOMBINATION
SILICON
SPUTTERING
SUBSTRATES
SURFACES
THIN FILMS
ULTRAVIOLET RADIATION
VISIBLE RADIATION