Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP
- Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping (Sweden)
- Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093 (United States)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan)
By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate that the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity.
- OSTI ID:
- 22399238
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
CHEMICAL COMPOSITION
CONCENTRATION RATIO
DEEP LEVEL TRANSIENT SPECTROSCOPY
EMISSION SPECTROSCOPY
ENERGY LEVELS
EV RANGE
EXCITATION
GALLIUM NITRIDES
HOLES
INDIUM PHOSPHIDES
LIGHT SOURCES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTONS
STRAINS
TRAPPING
TRAPS
VAPOR PHASE EPITAXY