Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

Journal Article · Wed Jan 07 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4905419· OSTI ID:22399235

Yang, W. C.; Wu, C. H.; Tseng, Y. T.; Chiu, S. Y.

The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation.

• OSTI ID: 22399235
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
GALLIUM NITRIDES
INDIUM
INDIUM COMPOUNDS
INTERFACES
LIQUID PHASE EPITAXY
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PLASMA
QUANTUM WELLS
SURFACES
TEMPERATURE DEPENDENCE
WAVELENGTHS