Si doping effects on (In,Ga)N nanowires

Journal Article · Sun Dec 28 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4905257· OSTI ID:22399177

Ramsteiner, M.; Geelhaar, L.; Riechert, H. ^[1]

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1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

Si doped (In,Ga)N nanowires (In content up to 0.4) are grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. By increasing the Si doping level, coalescence between nanowires is reduced and a more uniform morphology is obtained. The Raman spectra from highly doped samples show a characteristic broad band in the optical phonon frequency range, which became more prominent at higher doping levels. This Raman band can be explained by plasmon-phonon scattering from a free electron gas with strong wave-vector nonconservation, providing evidence for successful n-type doping. The measured plasmon-phonon modes are explained by lineshape simulations taking into account the simultaneous contribution of both the charge-density fluctuation and the impurity induced Fröhlich scattering mechanisms. The according lineshape analysis allows for an estimate of the carrier concentration.

• OSTI ID: 22399177
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
CHARGE DENSITY
COALESCENCE
COMPUTERIZED SIMULATION
CONCENTRATION RATIO
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRON GAS
FLUCTUATIONS
GALLIUM NITRIDES
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NANOWIRES
PHONONS
RAMAN SPECTRA
SCATTERING
SILICON
SUBSTRATES
VECTORS