Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

Journal Article · Mon Jan 12 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4906286· OSTI ID:22399140

Chatterjee, Abhishek; Khamari, Shailesh K.; Kumar, R.; Dixit, V. K.; Oak, S. M.

GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

• OSTI ID: 22399140
• Journal Information: Applied Physics Letters, Vol. 106, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
DENSITY
DISLOCATIONS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
GALLIUM NITRIDES
HALL EFFECT
HYDRIDES
INTERFACES
LAYERS
ORGANOMETALLIC COMPOUNDS
SUBSTRATES
VAPOR PHASE EPITAXY