H-tailored surface conductivity in narrow band gap In(AsN)

Journal Article · Mon Jan 12 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4906111· OSTI ID:22399110

Makarovsky, O. ^[1]; Capizzi, M.; Polimeni, A. ^[2]; Sandall, I. C.; Tan, C. H. ^[3]; Giubertoni, D. ^[4]; Krier, A.; Zhuang, Q. ^[5]

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1. School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD (United Kingdom)
2. Dipartimento di Fisica, Sapienza Università di Roma, Piazzale A. Moro 2, 00185 Roma (Italy)
3. Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom)
4. Center for Materials and Microsystems—Fondazione Bruno Kessler, via Sommarive 18, 38123 Povo, Trento (Italy)
5. Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)

We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (∼100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of ∼10{sup 18 }m{sup −2} and a high electron mobility (μ > 0.1 m{sup 2}V{sup −1}s{sup −1} at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface.

• OSTI ID: 22399110
• Journal Information: Applied Physics Letters, Vol. 106, Issue 2; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
CONCENTRATION RATIO
ELECTRIC CONDUCTIVITY
ELECTRON MOBILITY
ELECTRONIC STRUCTURE
ELECTRONS
ENERGY GAP
INDIUM ARSENIDES
INDIUM NITRIDES
N-TYPE CONDUCTORS
SHEETS
SURFACES
TEMPERATURE RANGE 0273-0400 K
TRAPS