Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

Journal Article · Mon Jan 12 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4905592· OSTI ID:22399091

Sarpi, B.; Daineche, R.; Girardeaux, C.; Bertoglio, M.; Derivaux, F.; Biberian, J. P. ^[1]; Hemeryck, A. ^[2]

---

1. Aix Marseille Univ, CINaM CNRS, F-13288 Marseille (France)
2. CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse (France)

Using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, and low energy electron diffraction, we have studied the growth of Mg deposited on Si(100)-(2 × 1). Coverage from 0.05 monolayer (ML) to 3 ML was investigated at room temperature. The growth mode of the magnesium is a two steps process. At very low coverage, there is formation of an amorphous ultrathin silicide layer with a band gap of 0.74 eV, followed by a layer-by-layer growth of Mg on top of this silicide layer. Topographic images reveal that each metallic Mg layer is formed by 2D islands coalescence process on top of the silicide interfacial layer. During oxidation of the Mg monolayer, the interfacial silicide layer acts as diffusion barrier for the oxygen atoms with a decomposition of the silicide film to a magnesium oxide as function of O{sub 2} exposure.

• OSTI ID: 22399091
• Journal Information: Applied Physics Letters, Vol. 106, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
AUGER ELECTRON SPECTROSCOPY
COALESCENCE
DECOMPOSITION
ELECTRON DIFFRACTION
ENERGY GAP
EV RANGE
INTERFACES
LAYERS
MAGNESIUM
MAGNESIUM OXIDES
OXIDATION
OXYGEN
SCANNING TUNNELING MICROSCOPY
SILICIDES
SURFACES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS