Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer

Journal Article · Mon Jan 12 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4905634· OSTI ID:22399089

Son, Seokki; Choi, Moonseok; Kim, Dohyung; Choi, Changhwan ^[1]; Yu, Sunmoon ^[2]

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1. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)

We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.

• OSTI ID: 22399089
• Journal Information: Applied Physics Letters, Vol. 106, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
INTERFACES
LAYERS
MOLYBDENUM SULFIDES
NUCLEATION
PRECURSOR
SURFACES
TEMPERATURE DEPENDENCE