Facile fabrication of a ultraviolet tunable MoS{sub 2}/p-Si junction diode

Journal Article · Mon May 11 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4921238· OSTI ID:22399061

Serrano, William; Naylor, Carl H.; Kybert, Nicholas J.; Johnson, A. T. Charlie ^[1]

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1. Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

Chemical vapor deposition grown MoS{sub 2} single crystals were transferred onto the edge of a p-Si/SiO{sub 2} wafer, forming an abrupt heterogeneous junction diode at the MoS{sub 2}/p-Si interface. When electrically characterized as a field effect transistor, MoS{sub 2} exhibits an n-type response and can be doped in the presence of ultraviolet (UV) light. As a diode, it operates satisfactorily in air, but has higher currents in vacuum with a turn on voltage of ∼1.3 V and an on/off ratio of 20 at ±2 V. UV irradiation increases the diode on state current, decreases the turn-on voltage, and reduces the ideality parameter below 2. These changes are reversible after annealing in air as desorption of electron trapping species like O{sub 2}{sup −} and H{sub 2}O{sup −} are believed responsible for this effect. A circuit integrating this diode was used to rectify a 1 kHz signal with an efficiency of 12%. Its simple design, coupled with the ability to clip AC signals, sense UV light, and reversibly tune these diodes, makes them inexpensive, multifunctional, and usable as active or passive circuit components in complex electronics.

• OSTI ID: 22399061
• Journal Information: Applied Physics Letters, Vol. 106, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CHEMICAL VAPOR DEPOSITION
DESORPTION
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTRONS
FABRICATION
FIELD EFFECT TRANSISTORS
INTERFACES
IRRADIATION
JUNCTION DIODES
KHZ RANGE
MOLYBDENUM SULFIDES
MONOCRYSTALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
SILICON
SILICON OXIDES
TRAPPING
ULTRAVIOLET RADIATION