Electronic properties of substitutional impurities in InGaN monolayer quantum wells
- Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan)
- Department of Materials System Science, Yokohama City University, Yokohama 236-0027 (Japan)
InGaN alloys and, in particular, InGaN monolayer quantum wells (MLQWs) are attracting an increasing amount of interest for opto-electronic applications. Impurities, incorporated during growth, can introduce electronic states that can degrade the performance of such devices. For this reason, we present a density functional and group theoretical study of the electronic properties of C, H, or O impurities in an InGaN MLQW. Analysis of the formation energy and symmetry reveals that these impurities are mostly donors and can be held accountable for the reported degradation of InGaN-based devices.
- OSTI ID:
- 22399039
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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