Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

Journal Article · Mon May 04 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4918934· OSTI ID:22399022

Chen, J. C. H.,; Klochan, O.; Micolich, A. P.; Das Gupta, K. ^[1]; Sfigakis, F.; Ritchie, D. A. ^[2]; Trunov, K.; Wieck, A. D. ^[3]; Reuter, D. ^[4]

---

1. Department of Physics, Indian Institute of Technology, Bombay, Powai, Mumbai 400076 (India)
2. Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
3. Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany)
4. Department Physik, Universität Paderborn, Warburger Strasse 100, D-33098 Paderborn (Germany)

We show that ballistic one-dimensional channels can be formed in an ambipolar device fabricated on a high mobility Al{sub 0.34}Ga{sub 0.66}As/GaAs heterostructure. Both electron and hole quantised conductances can be measured in the same one-dimensional channel. We have used this device to compare directly the subband spacings of the two charge carriers in the same confining potential and used this to compare the electron and hole effective masses.

• OSTI ID: 22399022
• Journal Information: Applied Physics Letters, Vol. 106, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM COMPOUNDS
CARRIER MOBILITY
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
ELECTRIC CONTACTS
ELECTRONS
FABRICATION
GALLIUM ARSENIDES
HOLES
ONE-DIMENSIONAL CALCULATIONS
POTENTIALS