Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates

Journal Article · Mon May 04 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4919761· OSTI ID:22399007

Bruno, A.; Lange, G. de; Asaad, S.; Enden, K. L. van der; Langford, N. K.; DiCarlo, L. ^[1]

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1. QuTech Advanced Research Center and Kavli Institute of Nanosicence, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft (Netherlands)

We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance.

• OSTI ID: 22399007
• Journal Information: Applied Physics Letters, Vol. 106, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
ELECTRIC FIELDS
ENERGY LOSSES
ETCHING
INTERFACES
IONS
METALS
MICROWAVE RADIATION
NIOBIUM COMPOUNDS
OPTIMIZATION
PERFORMANCE
QUALITY FACTOR
RESONATORS
SILICON
SUBSTRATES
SURFACE TREATMENTS
TITANIUM NITRIDES