Fermi energy tuning with light to control doping profiles during epitaxy

Journal Article · Mon May 04 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4921047· OSTI ID:22399001

Sanders, C. E.; Beaton, D. A.; Reedy, R. C.

The influence of light stimulation and photogenerated carriers on the process of dopant surface segregation during growth is studied in molecular beam epitaxially grown Si-doped GaAs structures. The magnitude of surface segregation decreases under illumination by above-bandgap photons, wherein splitting of the quasi Fermi levels reduces the band bending at the growth surface and raises the formation energy of compensating defects that can enhance atomic diffusion. We further show that light-stimulated epitaxy can be used as a practical approach to diminish dopant carry-forward in device structures and improve the performance of inverted modulation-doped quantum wells.

• OSTI ID: 22399001
• Journal Information: Applied Physics Letters, Vol. 106, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
CONTROL
DIFFUSION
DOPED MATERIALS
ENERGY GAP
EPITAXY
FERMI LEVEL
FORMATION HEAT
GALLIUM ARSENIDES
ILLUMINANCE
MODULATION
PHOTONS
QUANTUM WELLS
SILICON
STIMULATION
SURFACES
VISIBLE RADIATION