Graphite edge controlled registration of monolayer MoS{sub 2} crystal orientation
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China)
Transition metal dichalcogenides such as the semiconductor MoS{sub 2} are a class of two-dimensional crystals. The surface morphology and quality of MoS{sub 2} grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moiré patterns from several triangular MoS{sub 2} islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS{sub 2} adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS{sub 2} grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge.
- OSTI ID:
- 22398997
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 18; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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