Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Journal Article · Mon Apr 27 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4919656· OSTI ID:22398950

Reid, Benjamin P. L.,; Chan, Christopher C. S.; Taylor, Robert A. ^[1]; Kocher, Claudius ^[2]; Zhu, Tongtong; Oehler, Fabrice; Oliver, Rachel A. ^[3]

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1. Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom)
2. Department of Physics, University of Konstanz, Konstanz 78457 (Germany)
3. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.

• OSTI ID: 22398950
• Journal Information: Applied Physics Letters, Vol. 106, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CORRELATIONS
CRYSTAL STRUCTURE
CRYSTALS
FINE STRUCTURE
GALLIUM NITRIDES
INDIUM COMPOUNDS
PHOTOLUMINESCENCE
POLARIZATION
QUANTUM DOTS