Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr{sub 2}O{sub 3}/Pt stacked films
- Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)
- National Institute for Materials Science, 1-2-1, Sengen, Tsukuba, Ibaragi 305-0047 (Japan)
- Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan)
We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr{sub 2}O{sub 3}/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.
- OSTI ID:
- 22398926
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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