Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)
- Department of Chemical and Biological Engineering, Korea University, Seoul 136-713 (Korea, Republic of)
- Department of Electronic Science and Technology, Hebei University of Technology, Tianjin 300401 (China)
The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing.
- OSTI ID:
- 22398910
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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