Effect of magnetic field enhancement of the photocurrent in ferromagnetic metal-dielectric heterostructures SiO{sub 2}(Co)/GaAs
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)
- Scientific and Practical Materials Research Centre, National Academy of Sciences of Belarus, 220072 Minsk (Belarus)
Heterostructures of silicon dioxide films containing cobalt nanoparticles SiO{sub 2}(Co) grown on GaAs substrate exhibit at room temperature high values of magnetic field enhancement of photocurrent in the vicinity and above the GaAs bandgap of ∼1.4 eV. For photon energies E above the GaAs bandgap, the photocurrent significantly increases, while the avalanche process is suppressed by the magnetic field, and the current flowing through the heterostructure decreases. The photocurrent is enhanced in the SiO{sub 2}(Co 60 at. %)/GaAs heterostructure at the magnetic field H = 1.65 kOe by a factor of about ten for the photon energy E = 1.5 eV. This phenomenon is explained by a model describing electronic transitions in magnetic fields with the spin-dependent recombination process at deep impurity centers in the GaAs interface region.
- OSTI ID:
- 22398900
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COBALT
DIELECTRIC MATERIALS
EV RANGE
FERROMAGNETIC MATERIALS
FERROMAGNETISM
FILMS
GALLIUM ARSENIDES
HETEROJUNCTIONS
IMPURITIES
INTERFACES
MAGNETIC FIELDS
NANOPARTICLES
PHOTONS
RECOMBINATION
SILICON OXIDES
SPIN
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K