Determination of effective optical gap in dye/TiO{sub 2} systems inspired by p-n junctions
- Department of Mechanical and Aerospace Engineering, University of California at San Diego, La Jolla, California 92093 (United States)
- Research Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
The effective optical gap and device current limits of dye-sensitized solar cells (DSCs) were investigated. Optical gap determination was based on an approach that assumes the presence of a nanoscale p-n junction in the DSCs between the bulk TiO{sub 2} semiconductor and the dye-cluster with quantum size effect. On the basis of this approach, the effective optical gap of the dye-absorber was extracted from a relation between external quantum efficiency and photon energy. The short-circuit current density of the fabricated DSCs showed a current loss in the range from 3.7 to 5.1 mA cm{sup −2} compared to the device current limit. This current loss can be mainly attributed to the light reflection of the window layer and the native charge-transfer loss by device imperfections, including subsidiary charge-transfer loss by a nanoscale Schottky junction between TiO{sub 2} and the electrolyte.
- OSTI ID:
- 22398871
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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