Verification of electron doping in single-layer graphene due to H{sub 2} exposure with thermoelectric power

Journal Article · Mon Apr 06 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4917470· OSTI ID:22398853

Hong, Sung Ju; Kang, Hojin; Soler-Delgado, David; Kim, Kyung Ho; Park, Min ^[1]; Lee, Minwoo; Jeong, Dae Hong ^[2]; Shin, Dong Seok; Kubatkin, Sergey ^[3]

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1. Department of Nano Science and Technology, Seoul National University, Seoul 151-747 (Korea, Republic of)
2. Department of Chemistry Education, Seoul National University, Seoul 151-742 (Korea, Republic of)
3. Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Göteborg (Sweden)

We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H{sub 2} molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.

• OSTI ID: 22398853
• Journal Information: Applied Physics Letters, Vol. 106, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRONS
GRAPHENE
HYDROGEN
MOLECULES
N-TYPE CONDUCTORS
RAMAN SPECTROSCOPY
THERMOELECTRIC MATERIALS
THERMOELECTRIC PROPERTIES