Gate-tunable high mobility remote-doped InSb/In{sub 1−x}Al{sub x}Sb quantum well heterostructures

Journal Article · Mon Apr 06 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4917027· OSTI ID:22398846

Yi, Wei; Kiselev, Andrey A.; Thorp, Jacob; Noah, Ramsey; Nguyen, Binh-Minh; Bui, Steven; Rajavel, Rajesh D.; Hussain, Tahir; Gyure, Mark F.; Sokolich, Marko ^[1]; Kratz, Philip ^[2]; Qian, Qi; Manfra, Michael J. ^[3]; Pribiag, Vlad S.; Kouwenhoven, Leo P. ^[4]; Marcus, Charles M. ^[5]

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1. HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, California 90265 (United States)
2. Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)
3. Department of Physics and Astronomy, Purdue University, 525 Northwestern Ave., West Lafayette, Indiana 47907 (United States)
4. Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft (Netherlands)
5. Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark)

Gate-tunable high-mobility InSb/In{sub 1−x}Al{sub x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm{sup 2}/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO{sub 2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.

• OSTI ID: 22398846
• Journal Information: Applied Physics Letters, Vol. 106, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
CARRIER MOBILITY
CONCENTRATION RATIO
DIELECTRIC MATERIALS
DOPED MATERIALS
ELECTRON DENSITY
ELECTRON GAS
GALLIUM ARSENIDES
HAFNIUM OXIDES
HALL EFFECT
HETEROJUNCTIONS
HYSTERESIS
INDIUM ANTIMONIDES
OPACITY
QUANTUM WELLS
SUBSTRATES
TEMPERATURE DEPENDENCE
TWO-DIMENSIONAL SYSTEMS