Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C{sub 60}
- Department of Physics, Federal University of Paraná, P.O. Box 19044, 81531-990 Curitiba, Paraná (Brazil)
- Department of Chemistry, Federal University of Paraná, P.O. Box 19081, 81531-990 Curitiba, Paraná (Brazil)
- Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 Aalto (Finland)
- Department of Physics, Technological Federal University of Paraná, Curitiba 80230-901 (Brazil)
In this work, poly[2,7-(9,9-bis(2-ethylhexyl)-dibenzosilole)-alt-4,7-bis(thiophen-2-yl) benzo-2,1,3-thiadiazole] (PSiF-DBT) was used as active layer in bilayer solar cell with C{sub 60} as electron acceptor. As cast devices already show reasonable power conversion efficiency (PCE) that increases to 4% upon annealing at 100 °C. Space charge limited measurements of the hole mobility (μ) in PSiF-DBT give μ ∼ 1.0 × 10{sup −4} cm{sup 2}/(V s) which does not depend on the temperature of the annealing treatment. Moreover, positron annihilation spectroscopy experiments revealed that PSiF-DBT films are well stacked even without the thermal treatment. The variations in the transport of holes upon annealing are then small. As a consequence, the PCE rise was mainly induced by the increase of the polymer surface roughness that leads to a more effective interface for exciton dissociation at the PSiF-DBT/fullerene heterojunction.
- OSTI ID:
- 22398834
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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