Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

Journal Article · Mon Mar 30 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4915255· OSTI ID:22398799

Inoue, Shin-ichiro ^[1]; Naoki, Tamari ^[1]; Kinoshita, Toru; Obata, Toshiyuki; Yanagi, Hiroyuki ^[2]

---

1. Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan)
2. Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan)

Deep-ultraviolet (DUV) aluminum gallium nitride-based light-emitting diodes (LEDs) on transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high power are proposed and demonstrated. The AlN bottom side surface configuration, which is composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has been designed using finite-difference time-domain calculations to enhance light extraction. We have experimentally demonstrated an output power improvement of up to 196% as a result of the use of the embedded high-light-extraction hybrid nanophotonic structure. The DUV-LEDs produced have demonstrated output power as high as 90 mW in DC operation at a peak emission wavelength of 265 nm.

• OSTI ID: 22398799
• Journal Information: Applied Physics Letters, Vol. 106, Issue 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM
ALUMINIUM NITRIDES
CRYSTALS
EFFICIENCY
GALLIUM NITRIDES
LIGHT EMITTING DIODES
NANOSTRUCTURES
OPERATION
PHOTON EMISSION
SUBSTRATES
SURFACES
ULTRAVIOLET RADIATION
VISIBLE RADIATION