Full-range electrical characteristics of WS{sub 2} transistors
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States)
- Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)
- IBM T.J. Watson Research Center, Yorktown Height, New York 10598 (United States)
We fabricated transistors formed by few layers to bulk single crystal WS{sub 2} to quantify the factors governing charge transport. We established a capacitor network to analyze the full-range electrical characteristics of the channel, highlighting the role of quantum capacitance and interface trap density. We find that the transfer characteristics are mainly determined by the interplay between quantum and oxide capacitances. In the OFF-state, the interface trap density (<10{sup 12} cm{sup –2}) is a limiting factor for the subthreshold swing. Furthermore, the superior crystalline quality and the low interface trap density enabled the subthreshold swing to approach the theoretical limit on a back-gated device on SiO{sub 2}/Si substrate.
- OSTI ID:
- 22398791
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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