Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films

Tateishi, Kazutaka; Okamoto, Koichi; Tamada, Kaoru; Funato, Mitsuru; Kawakami, Yoichi

doi:10.1063/1.4916392

Title: Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films

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Abstract

Photoluminescence (PL) from InGaN/GaN quantum wells was highly enhanced by the surface plasmon (SP) resonance on aluminum thin films. The enhancement ratio of green emission reached 80, which was much larger than the previously reported enhancements on silver films. The resulting large enhancement should be attributed to an ∼20-fold enhancement of the excitation efficiency and ∼4-fold enhancement of the emission efficiency by the excitation and emission spectra. The temperature dependence of the PL intensities and the time-resolved PL measurements were also performed to understand the detailed mechanism. We concluded that the resonance between the excitation light and the SP on the Al surface should improve the excitation efficiency, i.e., the light absorption efficiency. This result suggests that the Al films have an extraordinary photon confinement effect, which are unique properties of plasmonics with Al and should be useful for new and wider applications.

Authors:

Tateishi, Kazutaka; Okamoto, Koichi; Tamada, Kaoru ^[1]; Funato, Mitsuru; Kawakami, Yoichi ^[2]

Institute for Materials Chemistry and Engineering, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581 (Japan)
Department of Electronic Science and Engineering, Kyoto University, Katsura Campus, Nishikyo-ku, Kyoto 615-8510 (Japan)

Publication Date:: Mon Mar 23 00:00:00 EDT 2015

OSTI Identifier:: 22398763

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; ALUMINIUM; CONFINEMENT; EFFICIENCY; EMISSION SPECTRA; EXCITATION; GALLIUM NITRIDES; INDIUM COMPOUNDS; PHOTOLUMINESCENCE; PHOTONS; QUANTUM WELLS; RESONANCE; SILVER; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS; TIME RESOLUTION; VISIBLE RADIATION

Citation Formats


                    Tateishi, Kazutaka, Okamoto, Koichi, Tamada, Kaoru, Funato, Mitsuru, and Kawakami, Yoichi. Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4916392.

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                    Tateishi, Kazutaka, Okamoto, Koichi, Tamada, Kaoru, Funato, Mitsuru, & Kawakami, Yoichi. Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films.  United States.  https://doi.org/10.1063/1.4916392

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                    Tateishi, Kazutaka, Okamoto, Koichi, Tamada, Kaoru, Funato, Mitsuru, and Kawakami, Yoichi. 2015.  
        "Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films".  United States.  https://doi.org/10.1063/1.4916392.

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@article{osti_22398763,

  title        = {Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films},

  author       = {Tateishi, Kazutaka and Okamoto, Koichi and Tamada, Kaoru and Funato, Mitsuru and Kawakami, Yoichi},

  abstractNote = {Photoluminescence (PL) from InGaN/GaN quantum wells was highly enhanced by the surface plasmon (SP) resonance on aluminum thin films. The enhancement ratio of green emission reached 80, which was much larger than the previously reported enhancements on silver films. The resulting large enhancement should be attributed to an ∼20-fold enhancement of the excitation efficiency and ∼4-fold enhancement of the emission efficiency by the excitation and emission spectra. The temperature dependence of the PL intensities and the time-resolved PL measurements were also performed to understand the detailed mechanism. We concluded that the resonance between the excitation light and the SP on the Al surface should improve the excitation efficiency, i.e., the light absorption efficiency. This result suggests that the Al films have an extraordinary photon confinement effect, which are unique properties of plasmonics with Al and should be useful for new and wider applications.},

  doi          = {10.1063/1.4916392},

  url          = {https://www.osti.gov/biblio/22398763},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 12,

  volume       = 106,

  place        = {United States},

  year         = {Mon Mar 23 00:00:00 EDT 2015},

  month        = {Mon Mar 23 00:00:00 EDT 2015}

}

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