Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes
- Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)
- Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University,207 Holden Hall - M/C 0237, Blacksburg, VA 24061 (United States)
Using an extended theoretical model, which includes the rate equations for both electrons and holes, we have studied the output characteristics of semiconductor quantum-well lasers. We have found non-trivial dependences of electron and hole concentrations in the waveguide region of the laser on the capture velocities of both types of carriers from the waveguide region into the quantum well. We have obtained the dependences of the internal differential quantum efficiency and optical output power of the laser on the capture velocities of electrons and holes. An increase in the capture velocities has been shown to result in suppression of parasitic recombination in the waveguide region and therefore in a substantial increase in the quantum efficiency and output power. (lasers)
- OSTI ID:
- 22395802
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 44, Issue 9; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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