Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

Journal Article · Mon Mar 16 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4916030· OSTI ID:22395779

Xin, Qian; Yan, Linlong; Luo, Yi ^[1]; Song, Aimin ^[1]

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1. School of Physics, Shandong University, Jinan 250100 (China)

In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

• OSTI ID: 22395779
• Journal Information: Applied Physics Letters, Vol. 106, Issue 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANODES
BREAKDOWN
ELECTRIC POTENTIAL
GALLIUM COMPOUNDS
HEAT TREATMENTS
INDIUM COMPOUNDS
LAYERS
MAGNETRONS
PLASTICS
RADIOWAVE RADIATION
SCHOTTKY BARRIER DIODES
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSISTORS
ZINC OXIDES