Nanosized perpendicular organic spin-valves

Journal Article · Mon Mar 09 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4914830· OSTI ID:22395715

Göckeritz, Robert; Homonnay, Nico; Müller, Alexander; Richter, Tim ^[1]; Fuhrmann, Bodo ^[2]; Schmidt, Georg ^[1]

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1. Institut für Physik, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany)
2. Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany)

A fabrication process for perpendicular organic spin-valve devices based on the organic semiconductor Alq3 has been developed which offers the possibility to achieve active device areas of less than 500 × 500 nm{sup 2} and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large area spin-valves indicates that the magnetoresistance of both large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

• OSTI ID: 22395715
• Journal Information: Applied Physics Letters, Vol. 106, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
COMPARATIVE EVALUATIONS
FABRICATION
MAGNETORESISTANCE
NANOSTRUCTURES
ORGANIC SEMICONDUCTORS
SPIN
TUNNEL EFFECT
VALVES
VARIATIONS